p-cds/n-Si Anisotype Heterojunction solar cells wih Efficiency of 6.4%

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contributor.author Ismail, Raid A. [رائد عبدالوهاب إِسماعيل] en_US
contributor.author Al Samarai, Abdul Majeed E. [عبد المجيد عيادة السامرائي] en_US
contributor.author Sultan, Omar A. A. [عمر عبد الستار عبد الرزاق سلطان] en_US
date.accessioned 2009-11-25T15:33:32Z en_US
date.available 2009-11-25T15:33:32Z en_US
date.issued 2005 en_US
identifier.citation Qatar University Science Journal, 2005, Vol. 25, Pages 31-39. en_US
identifier.uri http://hdl.handle.net/10576/10322 en_US
description.abstract In the present paper, p-CdS/n-Si heterojunction solar cells are prepared for the first time by the spray pyrolysis technique. Using such low-cost method, cells with 6.4'/o AM1 conversion efficiency ina O.ZZ fill factor have been made. The forward current of the prepared cells is dominated by the tunneling-recombination mechanism. Spectral response measurements revealed that these cells exhibit a wide spectral response (400-1150 nm) with two distinct peaks, the first at l.:550nm, while the second at ).:800nm. Photo-induced open-circuit voltage decay technique illustrated that the minority carriers lifetime of these cells is around 20ps en_US
language.iso en en_US
publisher Qatar University en_US
subject Physics en_US
subject الفيزياء ar
title p-cds/n-Si Anisotype Heterojunction solar cells wih Efficiency of 6.4% en_US
title.alternative خلايا شمسية نوع المفرق الهجين ............. ar
type Article en_US
identifier.pagination 31-39 en_US
identifier.volume 25 en_US


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