تصفح حسب الموضوع "Aluminium Nitride"
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Er Doped III-Nitride Semiconductors
(2017 , Master Thesis)Erbium ions (Er3+) doped in a solid material enables the intra 4f shell transitions from its first excited state (4I13/2) to the ground state (4I15/2). The intra-4f shell transition at 1540 nm is of exceptional interest ...