Browsing by Author "Vinh, N. Q."
Now showing items 1-2 of 2
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Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 ?m Region
( American Chemical Society , 2018 , Article)Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts ... -
Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
( OSA - The Optical Society , 2018 , Conference)We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity ...