Show simple item record

AuthorThomas, D.
AuthorThomas, Deepu
AuthorSadasivuni, Kishor Kumar
AuthorWaseem, Sadiya
AuthorKumar, Bijandra
AuthorCabibihan, John John
Available date2019-08-26T10:17:22Z
Publication Date2018-07-01
Publication NameMicrosystem Technologiesen_US
CitationThomas, D., Sadasivuni, K.K., Waseem, S. et al. Microsyst Technol (2018) 24: 3069.
Abstract© 2018, Springer-Verlag GmbH Germany, part of Springer Nature. Abstract: We report the synthesis and luminescence properties of the pure and Al-doped photosensitive ZnO films by microwave successive ionic layer adsorption reaction. The grain textured growth along c-axis in pure ZnO thin films and those doped with Al was studied by Energy-dispersive X-ray spectroscopy. The Al-doped films show high textured grain growth and high green emission intensity. The structural analysis of the thin films by X-ray diffraction along with scanning electron microscopy and its optical properties (photoluminescence) suggest creation of oxygen vacancy during doping which is responsible for the higher grain growth. The resistance measurements on the ZnO thin films reveal its significance in sensing and such films acts as good components of intelligent solar panels in which the electrical properties can be tuned by electron beam irradiation.
SponsorAcknowledgements This publication was made possible by the support of an NPRP grant from the Qatar National Research Fund (NPRP 7-673-2-251). The statements made herein are solely the responsibility of the authors.
PublisherSpringer Verlag
SubjectZnO film
TitleSynthesis, green emission and photosensitivity of Al-doped ZnO film
Issue Number7
Volume Number24
elsevier.identifier.scopusid SCOPUS_ID:85040868385

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record