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AuthorThomas, Deepu
AuthorAugustine, Simon
AuthorSadasivuni, Kishor Kumar
AuthorCabibihan, John John
Available date2020-09-10T10:45:18Z
Publication Date2017
Publication Name2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
URIhttp://dx.doi.org/10.1109/NANO.2017.8117341
URIhttp://hdl.handle.net/10576/16026
AbstractZinc oxide (ZnO) nano-polycrystalline thin film has been synthesized by microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The prepared samples were annealed in air and an inert atmosphere. X-ray diffraction (XRD) studies confirm the presence of hexagonal wurtzite ZnO structure in both synthesized films. The field emission scanning electron microscope (FESEM) revealed the flowered nature of ZnO films. The semiconductor characteristic of the samples was analyzed by using current-voltage (I-V) curves. The electrical resistance and photoconductivity studies of the samples were investigated with and without electron beam irradiation. We provide evidence for the photosensitivity enhancement for the sample prepared in the inert condition by irradiation. We demonstrate the electrical, temperature sensing, and photo conducting properties can be varied to a required level by electron beam irradiation. 1 2017 IEEE.
SponsorThis publication was made possible by the support of an NPRP grant from the Qatar National Research Fund (NPRP 7-673-2-251).
Languageen
PublisherInstitute of Electrical and Electronics Engineers Inc.
Subjectcharacterization
Subjectexperimental conditions
Subjectgrain size
Subjectirradiation
SubjectmSILAR
SubjectPhoto sensor
TitleEffect of synthesis conditions on ZnO thin film photosensitivity via mSILAR technique
TypeConference Paper
Pagination391-396


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