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AuthorAyesh, Ahmad I.
Available date2020-12-02T07:03:51Z
Publication Date2017
Publication NameThin Solid Films
ResourceScopus
ISSN406090
URIhttp://dx.doi.org/10.1016/j.tsf.2017.06.007
URIhttp://hdl.handle.net/10576/17153
AbstractInert-gas condensation is a novel technique that can be used to produce nanoclusters for different applications. In the present work, dc sputtering combined with inert-gas condensation were used to produce copper oxide nanoclusters inside an ultra-high vacuum compatible system. The size and yield of nanoclusters could be controlled by adjusting the inert-gas flow rate, sputtering discharge power, and aggregation length. The results revealed that nanoclusters were formed as a result of either or both mechanisms: three-body and two-body collisions. Herein, the three-body collision mechanism is responsible for nanocluster seed production, while two-body collision mechanism is responsible for nanocluster growth through atomic condensation and coagulation of nanoclusters. The inert-gas flow rate was found to be the main factor to determine the nanocluster size. The results were compared with a discrete coagulation system model and revealed reasonable agreement. Thin film of copper oxide nanoclusters was fabricated and used to produce a device. Electrical and optical measurements of the device revealed its suitability for practical applications such as solar cells. 2017 Elsevier B.V.
SponsorThe author would like to acknowledge the financial support of Qatar University - grant number (QUUG-CAS-DMSP-15\16-20), and the use of research facility at the Department of Physics, UAE University.
Languageen
PublisherElsevier B.V.
SubjectCuO
Inert-gas condensation
Nanoclusters
Sputtering
TitleProduction of metal-oxide nanoclusters using inert-gas condensation technique
TypeArticle
Pagination207-213
Volume Number636
dc.accessType Abstract Only


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