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Self-implantation of Cz-Si: Clustering and annealing of defects
(
Elsevier
, 2006 , Article)
Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 × 10 15 ions/cm 2 and after annealing between ...