Browsing Materials Science & Technology by Publisher "American Institute of Physics Inc."

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    • Influence of TMAl preflow on AlN epitaxy on sapphire 

      Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; ... more authors ( American Institute of Physics Inc. , 2017 , Article)
      The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow ...