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المؤلفShiri, Daryoush
المؤلفVerma, Amit
المؤلفKhader, Mahmoud M.
تاريخ الإتاحة2016-03-09T14:00:55Z
تاريخ النشر2014-04
اسم المنشورJournal of Applied Physics
المصدرScopus
الاقتباسShiri, D., Verma, A., Khader, M.M. "Photoconductive response of strained silicon nanowires: A Monte Carlo study" (2014) Journal of Applied Physics, 115 (13), art. no. 133708, .
الرقم المعياري الدولي للكتاب0021-8979
معرّف المصادر الموحدhttp://dx.doi.org/10.1063/1.4870466
معرّف المصادر الموحدhttp://hdl.handle.net/10576/4232
الملخصUsing Ensemble Monte Carlo simulations, the photocurrent in a 500 nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the order of 21.3 mA/W for an input light wavelength of 532 nm and intensity of 0.25-2.5 kW/cm2. The super-unity slope of 1.2 in photo conductance versus input light intensity suggests that the nanowire has a photoconductive gain and highlights its advantage over germanium nanowires with sub-unity slope (0.77). The generated photocurrents are in the 0.1 nA-1 nA range. Density Functional Theory and Tight Binding methods were used for strain application and band structure calculation, respectively. Both longitudinal acoustic and optical phonons were included in the calculation of the carrier-phonon scattering events, which showed a two-order of magnitude stronger role for longitudinal optical phonons.
راعي المشروعNPRP Grant No. 5-968-2-403 from the Qatar National Research Fund (a member of Qatar Foundation).
اللغةen
الناشرAIP Publishing LLC.
الموضوعMonte Carlo methods
Phonons
Photoconductivity
Band structure calculation
Carrier-phonon scattering
Longitudinal acoustic
Longitudinal optical phonons
Photoconductive gains
Photoconductive response
Strained silicon nanowires
Tight binding methods
العنوانPhotoconductive response of strained silicon nanowires: A Monte Carlo study
النوعArticle
رقم العدد13
رقم المجلد115
dc.accessType Abstract Only


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