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AuthorAl-Qaradawi, I. Y.
Available date2023-11-19T07:31:35Z
Publication Date2006-02-28
Publication NameApplied Surface Science
Identifierhttp://dx.doi.org/10.1016/j.apsusc.2005.08.074
CitationAl-Qaradawi, I. Y. (2006). Investigations of He+ implantation and subsequent annealing effects in InP. Applied surface science, 252(9), 3215-3220.‏
ISSN01694332
URIhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=32644455485&origin=inward
URIhttp://hdl.handle.net/10576/49474
AbstractThe influence of 70 keV He + ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion fluences of 1 × 10 16 , 5 × 10 16 and 1 × 10 17 cm -2 were studied in the as-implanted condition as well as after annealing at 640 °C for times between 5 and 40 min. It was found that the line-shape parameter of the positron-electron annihilation peak in the implanted layer increases after 5 min annealing, then after longer annealing times it starts to decline gradually until it reaches a value close to the value of the as-grown sample. This implies that vacancy-like defects can be created in InP by He implantation followed by short-thermal annealing at T > 600 °C. Comparison of the results with a study where cavities were observed in He-implanted InP has been carried out. © 2005 Elsevier B.V. All rights reserved.
Languageen
PublisherElsevier
SubjectAnnealing
Cavities
Defect evolution
Doppler broadening
InP
TitleInvestigations of He <sup>+</sup> implantation and subsequent annealing effects in InP
TypeArticle
Pagination3215-3220
Issue Number9
Volume Number252
dc.accessType Abstract Only


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