Frequency conversion layers for Si solar cell efficiency improvement
Author | Gourbilleau, Fabrice |
Author | Dumont, Lucile |
Author | Cardin, Julien |
Author | Gouesmel, Anaïs |
Author | Yu, Ing Song |
Author | Labbé, Christophe |
Author | Merabet, Hocine |
Available date | 2024-03-05T08:48:34Z |
Publication Date | 2017-03-24 |
Publication Name | Lecture Notes in Electrical Engineering |
Identifier | http://dx.doi.org/10.1007/978-981-10-4235-5_5 |
Citation | Gourbilleau, F., Dumont, L., Cardin, J., Gouesmel, A., Yu, I. S., Labbé, C., & Merabet, H. (2017). Frequency Conversion Layers for Si Solar Cell Efficiency Improvement. In Frontiers in Electronic Technologies: Trends and Challenges (pp. 85-91). Springer Singapore. |
ISBN | 978-981104234-8 |
ISSN | 1876-1100 |
Abstract | SiNx and SiNx: Tb3+ thin layers deposited by reactive magnetron co-sputtering have been studied with the aim of optimizing the light management in Si solar cells. Those Si-based layers are developed to be compatible with the Si-PV technology. An efficient energy transfer between matrix and terbium ions has been demonstrated and optimized. The layer composition and microstructure as well as its optical properties have been analyzed to favor the required optical properties for achieving a good solar cell, i.e., good anti-reflective properties and high luminescence emission intensity. Finally a Tb-doped SiNx thin film has been deposited on the top of a Si solar cells and solar cell characteristics studied. |
Sponsor | This work has been supported by the French Research National Agency through the project GENESE (N° ANR-13-BS09-0020-01), by the French Ministry of Research through the ORCHID PHC project n°33572XF and the Qatar National Research Fund though the project Grant 8-1467-1-268. |
Language | en |
Publisher | Springer Nature |
Subject | Alumina Down conversion Down shifting Frequency conversion Si solar cell Silicon nitride |
Type | Book chapter |
Pagination | 85-91 |
Volume Number | 433 |
ESSN | 1876-1119 |
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