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AuthorGourbilleau, Fabrice
AuthorDumont, Lucile
AuthorCardin, Julien
AuthorGouesmel, Anaïs
AuthorYu, Ing Song
AuthorLabbé, Christophe
AuthorMerabet, Hocine
Available date2024-03-05T08:48:34Z
Publication Date2017-03-24
Publication NameLecture Notes in Electrical Engineering
Identifierhttp://dx.doi.org/10.1007/978-981-10-4235-5_5
CitationGourbilleau, F., Dumont, L., Cardin, J., Gouesmel, A., Yu, I. S., Labbé, C., & Merabet, H. (2017). Frequency Conversion Layers for Si Solar Cell Efficiency Improvement. In Frontiers in Electronic Technologies: Trends and Challenges (pp. 85-91). Springer Singapore.
ISBN978-981104234-8
ISSN1876-1100
URIhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85017510368&origin=inward
URIhttp://hdl.handle.net/10576/52679
AbstractSiNx and SiNx: Tb3+ thin layers deposited by reactive magnetron co-sputtering have been studied with the aim of optimizing the light management in Si solar cells. Those Si-based layers are developed to be compatible with the Si-PV technology. An efficient energy transfer between matrix and terbium ions has been demonstrated and optimized. The layer composition and microstructure as well as its optical properties have been analyzed to favor the required optical properties for achieving a good solar cell, i.e., good anti-reflective properties and high luminescence emission intensity. Finally a Tb-doped SiNx thin film has been deposited on the top of a Si solar cells and solar cell characteristics studied.
SponsorThis work has been supported by the French Research National Agency through the project GENESE (N° ANR-13-BS09-0020-01), by the French Ministry of Research through the ORCHID PHC project n°33572XF and the Qatar National Research Fund though the project Grant 8-1467-1-268.
Languageen
PublisherSpringer Nature
SubjectAlumina
Down conversion
Down shifting
Frequency conversion
Si solar cell
Silicon nitride
TitleFrequency conversion layers for Si solar cell efficiency improvement
TypeBook chapter
Pagination85-91
Volume Number433
ESSN1876-1119


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