Photoresponse of silicon with asymmetric area contacts
| Author | Rabbani, M. Golam |
| Author | Sundararajan, Jency P. |
| Author | Verma, Amit |
| Author | Nekovei, Reza |
| Author | Khader, Mahmoud M. |
| Author | Darling, R. B. |
| Author | Patil, Sunil R. |
| Available date | 2024-06-05T06:13:49Z |
| Publication Date | 2016-12-01 |
| Publication Name | Semiconductor Science and Technology |
| Identifier | http://dx.doi.org/10.1088/0268-1242/32/1/015001 |
| Citation | Rabbani, M. G., Sundararajan, J. P., Verma, A., Nekovei, R., Khader, M. M., Darling, R. B., & Patil, S. R. (2016). Photoresponse of silicon with asymmetric area contacts. Semiconductor Science and Technology, 32(1), 015001. |
| ISSN | 0268-1242 |
| Abstract | We report on high performance metal-semiconductor-metal (MSM) photosensors based on asymmetric metal pad areas. The reported devices require a single-step metal deposition, and exhibit large photo response even under zero-bias. Moreover the devices offer fast and stable light switching behavior. Device fabrication and electrical characterization results are presented that are further analyzed with TCAD modeling and simulation. Device simulations show that contact asymmetry along with surface recombination and barrier lowering plays an important role in the MSM I-V characteristics. |
| Sponsor | This publication was made possible by the NPRP award [NPRP 5-968-2-403] from the Qatar National Research Fund (a member of The Qatar Foundation). |
| Language | en |
| Publisher | Institute of Physics Publishing |
| Subject | asymmetric contact MSM photosensor TCAD modeling |
| Type | Article |
| Issue Number | 1 |
| Volume Number | 32 |
| ESSN | 1361-6641 |
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