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AuthorHassan, Walid M.I.
AuthorVerma, Amit
AuthorNekovei, Reza
AuthorKhader, Mahmoud M.
AuthorAnantram, M. P.
Available date2024-06-05T09:08:18Z
Publication Date2014-08
Publication NameProceedings of the IEEE Conference on Nanotechnology
Identifierhttp://dx.doi.org/10.1109/NANO.2014.6968131
CitationHassan, W. M., Verma, A., Nekovei, R., Khader, M. M., & Anantram, M. P. (2014, August). Effect of the length of silicon nanodot/wire on band gap. In 14th IEEE International Conference on Nanotechnology (pp. 373-376). IEEE.
ISSN1944-9399
URIhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84919472328&origin=inward
URIhttp://hdl.handle.net/10576/55835
AbstractWe will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ideal infinitely long SNW. The H/T atomic ratio can be used to express the S/V ratio, which is approximately linearly related to band gap value.
Languageen
PublisherInstitute of Electrical and Electronics Engineers Inc. (IEEE)
SubjectBandgap
Length
Silicon nanowire
Theoretical
TitleEffect of the length of silicon nano-dot/wire on band gap
TypeConference Paper
Pagination373-376
EISBN978-1-4799-5622-7
dc.accessType Full Text


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