Browsing by Author "Ho, V. X."
Now showing items 1-2 of 2
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Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 ?m Region
Ho V.X.; Al Tahtamouni T.M.; Jiang H.X.; Lin J.Y.; Zavada J.M.; Vinh N.Q.... more authors ... less authors ( American Chemical Society , 2018 , Article)Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts ... -
Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
Ho, V. X.; Al Tahtamouni, T. M.; Wang, Y.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.; Vinh, N. Q.... more authors ... less authors ( OSA - The Optical Society , 2018 , Conference Paper)We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity ...