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AuthorYilbas B.S.
AuthorAlassar R.S.M.
AuthorMansoor S.B.
AuthorAl-Dweik A.Y.
Available date2020-04-09T12:27:27Z
Publication Date2019
Publication NameJournal of Computational and Theoretical Transport
ResourceScopus
ISSN23324309
URIhttp://dx.doi.org/10.1080/23324309.2019.1607753
URIhttp://hdl.handle.net/10576/13980
AbstractAn analytical approach for the solution of the equation for phonon transport is presented for the combination thin films system. The transient phonon radiative transport model is considered and the combination of the silicon diamond silicon films is accommodated in the analysis. The multi-film system is thermally disturbed from the edges through introducing temperature difference across the combined films. Equivalent equilibrium temperature is considered quantifying the distribution of the phonon intensity in the films. Equivalent equilibrium temperature obtained from the analytical approach is compared with that predicted from the numerical solution. It is found that numerical predictions of equivalent equilibrium temperature agree well with those obtained from the analytical approach. The boundary scattering of phonons at the film edges causes equivalent equilibrium temperature jump at film edges, which becomes apparent in the early heating periods. Phonon scattering in the combined films causes sharp decay of temperature in the films, which is more pronounced in the silicon film than that of the diamond.
SponsorAuthors acknowledge the support of Deanship of Research, KFUPM, for the funded research project # RG181003 and King Abdullah City for Atamic and Renewable Energy (K.A. CARE) during the course of this work. In addition, Ahmad Y. Al-Dweik is thankful to Qatar University for its continuous support and excellent research facilities.
Languageen
PublisherTaylor and Francis Inc.
Subjectequivalent equilibrium temperature
Phonon transfer
thermal boundary resistance
thin films
TitleMicroscale Thermal Energy Transfer Over a Combined System of Thin Films: Analytical Approach
TypeArticle
Pagination89-108
Issue Number3
Volume Number48
dc.accessType Abstract Only


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