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AuthorMallick, Shoaib
AuthorVorobiev, Andrei
AuthorAhmad, Zubair
AuthorTouati, Farid
AuthorGevorgian, Spartak
Available date2020-12-02T07:03:52Z
Publication Date2017
Publication NameCeramics International
ResourceScopus
ISSN2728842
URIhttp://dx.doi.org/10.1016/j.ceramint.2017.04.008
URIhttp://hdl.handle.net/10576/17168
AbstractIn this article, the effect of Mn doping on the permittivity and dielectric loss in 0.67BiFeO3-0.33BaTiO3 (BF-BT) based film bulk acoustic resonator test structures has been investigated. BF-BT thin films were deposited on the fused silica substrates with Pt/TiO2/Ti as bottom electrode. During the study of the BF-BT based parallel-plate structures, it has been revealed that BF-BT is in the ferroelectric state at room temperature. Higher permittivity (ԑ) is observed at a growth temperature of 600 °C and lower dielectric loss is achieved at 0.3 wt% Mn doping contents. These results show that the proposed BF-BT based FBAR test structure has a great potential for applications in tunable thin Film Bulk Acoustic Resonator (FBAR) devices. Comparison of the measured and simulation results has been made by utilizing the Mason equivalent circuit.
SponsorThis work was made possible by GSRA3-1-1116-14016 from the Qatar National Research Fund (a member of Qatar Foundation). The findings made herein are solely the responsibility of the authors.
Languageen
PublisherElsevier Ltd
SubjectBismuth Barium Titanate
Dielectric properties
Mn doped BF-BT thin films
PLD technique
Tunable FBAR
TitleDielectric properties of Mn doped Bismuth Barium Titanate based ceramic thin films prepared by PLD technique
TypeArticle
Pagination8778-8783
Issue Number12
Volume Number43
dc.accessType Abstract Only


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