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المؤلفAn, Tiance
المؤلفTang, Jing
المؤلفZhang, Yueyu
المؤلفQuan, Yingzhou
المؤلفGong, Xingao
المؤلفAl-Enizi, Abdullah M.
المؤلفElzatahry, Ahmed A.
المؤلفZhang, Lijuan
المؤلفZheng, Gengfeng
تاريخ الإتاحة2021-09-01T10:03:33Z
تاريخ النشر2016
اسم المنشورACS Applied Materials and Interfaces
المصدرScopus
معرّف المصادر الموحدhttp://dx.doi.org/10.1021/acsami.6b01534
معرّف المصادر الموحدhttp://hdl.handle.net/10576/22501
الملخصDespite the recent progress of developing graphitic carbon nitride (g-C3N4) as a metal-free photocatalyst, the synthesis of nanostructured g-C3N4 has still remained a complicated and time-consuming approach from its bulk powder, which substantially limits its photoelectrochemical (PEC) applications as well as the potential to form composites with other semiconductors. Different from the labor-intensive methods used before, such as exfoliation or assistant templates, herein, we developed a facile method to synthesize graphitic C3N4 quantum dots (g-CNQDs) directly grown on TiO2 nanowire arrays via a one-step quasi-chemical vapor deposition (CVD) process in a homemade system. The as-synthesized g-CNQDs uniformly covered over the surface of TiO2 nanowires and exhibited attractive photoluminescence (PL) properties. In addition, compared to pristine TiO2, the heterojunction of g-CNQD-decorated TiO2 nanowires showed a substantially enhanced PEC photocurrent density of 3.40 mA/cm2 at 0 V of applied potential vs Ag/AgCl under simulated solar light (300 mW/cm2) and excellent stability with ?82% of the photocurrent retained after over 10 h of continuous testing, attributed to the quantum and sensitization effects of g-CNQDs. Density functional theory calculations were further carried out to illustrate the synergistic effect of TiO2 and g-CNQD. Our method suggests that a variety of g-CNQD-based composites with other semiconductor nanowires can be synthesized for energy applications. 2016 American Chemical Society.
راعي المشروعWe thank the following funding agencies for supporting this work: the National Key Basic Research Program of China (2013CB934104), the Natural Science Foundation of China (21322311, 21473038, 21471034), the Science and Technology Commission of Shanghai Municipality (14JC1490500), the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, and the Collaborative Innovation Center of Chemistry for Energy Materials (2011-iChem). The authors extend their sincere appreciation to the Deanship of Scientific Research at King Saud University for funding the Prolific Research group (PRG-1436-14).
اللغةen
الناشرAmerican Chemical Society
الموضوعCarbon nitride
Chemical vapor deposition
Density functional theory
Electrochemistry
Heterojunctions
Nanocrystals
Nanowires
Nitrides
Photoelectrochemical cells
Photoluminescence
Semiconductor quantum wells
Titanium dioxide
Energy applications
Graphitic carbon nitrides
Photo-electrochemical conversions
Photocurrent density
Photoelectrochemicals
Photoluminescence properties
Semiconductor nanowire
Simulated solar light
Semiconductor quantum dots
العنوانPhotoelectrochemical Conversion from Graphitic C3N4 Quantum Dot Decorated Semiconductor Nanowires
النوعArticle
الصفحات12772-12779
رقم العدد20
رقم المجلد8
dc.accessType Abstract Only


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