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AuthorAl Tahtamouni, T. M.
AuthorLi, J.
AuthorLin, J. Y.
AuthorJiang, H. X.
Available date2021-09-05T05:40:11Z
Publication Date2016
Publication NameOptical Materials Express
ResourceScopus
ISSN21593930
URIhttp://dx.doi.org/10.1364/OME.6.003476
URIhttp://hdl.handle.net/10576/22670
AbstractWe report on the growth, fabrication and electroluminescence (EL) characteristics of light-emitting diodes (LEDs) based on Er-doped GaN (GaN:Er) and GaN/AlGaN multiple quantum well (MQW:Er) active layers. The LED structures were grown using metal organic chemical vapor deposition and processed into 300x300 µm2 mesa devices. The LEDs exhibit emission at 1.54 µm, due to Er intra-4f transitions, under forward bias conditions. The 1.54 µm emission properties from LEDs with MQWs:Er and GaN:Er active layers were probed. The LEDs fabricated using MQWs:Er exhibited improved performance as evidenced by a factor of 4 enhancement in the optical power output as compared to conventional GaN:Er based LEDs. The results demonstrate a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.
Languageen
PublisherOSA - The Optical Society
SubjectAluminum compounds
Electroluminescence
Erbium
Erbium compounds
Gallium nitride
III-V semiconductors
Light
Metallorganic chemical vapor deposition
Modulators
Organic chemicals
Organometallics
Wide band gap semiconductors
Current injections
Emission properties
GaN/AlGaN multiple quantum wells
LED structure
Light emitting devices
Light emitting diode (LEDs)
Optical power
Waveguide amplifiers
Semiconductor quantum wells
TitleCurrent injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells
TypeArticle
Pagination3476-3481
Issue Number11
Volume Number6
dc.accessType Open Access


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