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AuthorJlassi K.
AuthorMallick S.
AuthorEribi A.
AuthorChehimi M.M.
AuthorAhmad Z.
AuthorTouati, Farid
AuthorKrupa I.
Available date2022-05-22T11:03:02Z
Publication Date2021
Publication NameSensors and Actuators, B: Chemical
ResourceScopus
Identifierhttp://dx.doi.org/10.1016/j.snb.2020.129058
URIhttp://hdl.handle.net/10576/31400
AbstractIn this work, graphene quantum dots (GQDs) were prepared from Graphitic waste. The resulting GQDs were evaluated for the potential application for resistive humidity sensors. The resistive humidity sensors were fabricated on the pre-patterned interdigital ITO electrodes using the three different concentrations (2.5, 5.0, and 10 mg) of GQDs in DMF. The GQDs films were deposited using the spin coating technique. The GQDs (10 mg/ml) based impedance sensors showed good sensitivity and lowered hysteresis as compared to the other ratios (2.5 and 5 mg) of the GQDs. The maximum calculated hysteresis of the GQDs (10 mg) based humidity sensor is around 2.2 % at 30%RH, and the minimum calculated hysteresis of the GQDs (10 mg/ml) based humidity sensor is approximately 0.79 % at 60 %RH. The response and recovery time found to be 15 s and 55 s, respectively. The interesting humidity-dependent resistive properties of these prepared GQDs make them promising for potential application in humidity sensing.
Languageen
PublisherElsevier B.V.
SubjectGraphene
Graphene quantum dots
Hysteresis
Nanocrystals
Semiconductor quantum dots
Facile preparation
Graphite waste
Humidity sensing
Impedance sensors
Interdigital
ITO electrodes
Resistive humidity sensor
Response and recovery time
Humidity sensors
TitleFacile preparation of N-S co-doped graphene quantum dots (GQDs) from graphite waste for efficient humidity sensing
TypeArticle
Volume Number328
dc.accessType Open Access


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