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Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells
( OSA - The Optical Society , 2016 , Article)We report on the growth, fabrication and electroluminescence (EL) characteristics of light-emitting diodes (LEDs) based on Er-doped GaN (GaN:Er) and GaN/AlGaN multiple quantum well (MQW:Er) active layers. The LED structures ... -
Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
( OSA - The Optical Society , 2018 , Conference Paper)We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity ...