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Towards ultra high frequency and high efficiency gate drive circuits

المؤلفGhazi, K. A.
المؤلفBen-Brahim, L.
تاريخ الإتاحة2022-11-22T16:13:24Z
تاريخ النشر2013
اسم المنشور2013 7th IEEE GCC Conference and Exhibition, GCC 2013
المعرّفhttp://dx.doi.org/10.1109/IEEEGCC.2013.6705808
الاقتباسGhazi, K. A., & Ben-Brahim, L. (2013, November). Towards ultra high frequency and high efficiency gate drive circuits. In 2013 7th IEEE GCC Conference and Exhibition (GCC) (pp. 378-383). IEEE.
الترقيم الدولي الموحد للكتاب 978-1-4799-0724-3
معرّف المصادر الموحدhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84893599794&origin=inward
معرّف المصادر الموحدhttp://hdl.handle.net/10576/36598
الملخصRecent developments in semiconductor technology enabled developing converters with ultra high switching frequency to achieve high power densities which increased the complexity of designing optimized gate drive circuits. This paper discusses latest developments in gate drive technologies including level-shifting, isolated power sources and drive circuit techniques which are further investigated by simulation and compared to be used in future gate drive circuits. Special considerations for designing gate drive circuits have been mentioned and foundation laid out for further optimization of their performance. Finally a new gate drive circuit was proposed based on mentioned developments and challenges discussed to bring proposed gate drive circuit into practical industrial applications. © 2013 IEEE.
راعي المشروعQatar National Research Fund (QNRF) - NPRP 09 - 426 - 2 - 160
اللغةen
الموضوعGate Capacitance Energy Recovery
Integrated Isolated High Side Gate Drive
Isolated Power Source
Level Shifting Techniques
Resonant Gate Drive Circuits
العنوانTowards ultra high frequency and high efficiency gate drive circuits
النوعConference Paper
الصفحات378-383


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