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AuthorHo, V. X.
AuthorAl Tahtamouni, T. M.
AuthorWang, Y.
AuthorJiang, H. X.
AuthorLin, J. Y.
AuthorZavada, J. M.
AuthorVinh, N. Q.
Available date2023-08-28T08:00:15Z
Publication Date2018-01-01
Publication NameOptics InfoBase Conference Papers
Identifierhttp://dx.doi.org/10.1364/ASSL.2018.ATu4A.2
CitationHo, V. X., Al Tahtamouni, T. M., Wang, Y., Jiang, H. X., Lin, J. Y., Zavada, J. M., & Vinh, N. Q. (2018, November). Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature. In Advanced Solid State Lasers (pp. ATu4A-2). Optica Publishing Group.‏
ISBN9781943580484
URIhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85059482485&origin=inward
URIhttp://hdl.handle.net/10576/46827
AbstractWe report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral-linewidth-narrowing, excitation-length.
SponsorN.Q.V. acknowledges the support from NSF (ECCS-1358564). The materials growth effort at TTU was supported by JTO/ARO (W911NF-12-1-0330
Languageen
PublisherOSA - The Optical Society
SubjectSolid state lasers
TitleTelecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
TypeConference Paper
Volume NumberPart F121-ASSL 2018
dc.accessType Abstract Only


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