| Author | Ho, V. X. |
| Author | Al Tahtamouni, T. M. |
| Author | Wang, Y. |
| Author | Jiang, H. X. |
| Author | Lin, J. Y. |
| Author | Zavada, J. M. |
| Author | Vinh, N. Q. |
| Available date | 2023-08-28T08:00:15Z |
| Publication Date | 2018-01-01 |
| Publication Name | Optics InfoBase Conference Papers |
| Identifier | http://dx.doi.org/10.1364/ASSL.2018.ATu4A.2 |
| Citation | Ho, V. X., Al Tahtamouni, T. M., Wang, Y., Jiang, H. X., Lin, J. Y., Zavada, J. M., & Vinh, N. Q. (2018, November). Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature. In Advanced Solid State Lasers (pp. ATu4A-2). Optica Publishing Group. |
| ISBN | 9781943580484 |
| URI | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85059482485&origin=inward |
| URI | http://hdl.handle.net/10576/46827 |
| Abstract | We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral-linewidth-narrowing, excitation-length. |
| Sponsor | N.Q.V. acknowledges the support from NSF (ECCS-1358564). The materials growth effort at TTU was supported by JTO/ARO (W911NF-12-1-0330 |
| Language | en |
| Publisher | OSA - The Optical Society |
| Subject | Solid state lasers
|
| Title | Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature |
| Type | Conference |
| Volume Number | Part F121-ASSL 2018 |
|
dc.accessType
| Abstract Only |
