An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold

Abstract

Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field-effect transistors are merged to overcome the mentioned problem. The proposed cell has full-swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.