Show simple item record

AuthorRafiee, Mahmood
AuthorSadeghi, Yaqhoub
AuthorShiri, Nabiollah
AuthorSadeghi, Ayoub
Available date2023-12-07T07:32:03Z
Publication Date2021
Publication NameElectronics Letters
ResourceScopus
ISSN135194
URIhttp://dx.doi.org/10.1049/ell2.12221
URIhttp://hdl.handle.net/10576/50246
AbstractHere, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field-effect transistors are merged to overcome the mentioned problem. The proposed cell has full-swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.
Languageen
PublisherJohn Wiley and Sons Inc
SubjectLogic circuits
Other field effect devices
Interpolation and function approximation (numerical analysis)
Logic and switching circuits
Interpolation and function approximation (numerical analysis)
Fullerene, nanotube and related devices
TitleAn approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
TypeArticle
Pagination650-652
Issue Number17
Volume Number57
dc.accessType Abstract Only


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record