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المؤلفThomas, Deepu
المؤلفAugustine, Simon
المؤلفSadasivuni, Kishor Kumar
المؤلفCabibihan, John John
تاريخ الإتاحة2020-09-10T10:45:18Z
تاريخ النشر2017
اسم المنشور2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
المصدرScopus
معرّف المصادر الموحدhttp://dx.doi.org/10.1109/NANO.2017.8117341
معرّف المصادر الموحدhttp://hdl.handle.net/10576/16026
الملخصZinc oxide (ZnO) nano-polycrystalline thin film has been synthesized by microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The prepared samples were annealed in air and an inert atmosphere. X-ray diffraction (XRD) studies confirm the presence of hexagonal wurtzite ZnO structure in both synthesized films. The field emission scanning electron microscope (FESEM) revealed the flowered nature of ZnO films. The semiconductor characteristic of the samples was analyzed by using current-voltage (I-V) curves. The electrical resistance and photoconductivity studies of the samples were investigated with and without electron beam irradiation. We provide evidence for the photosensitivity enhancement for the sample prepared in the inert condition by irradiation. We demonstrate the electrical, temperature sensing, and photo conducting properties can be varied to a required level by electron beam irradiation. 1 2017 IEEE.
راعي المشروعThis publication was made possible by the support of an NPRP grant from the Qatar National Research Fund (NPRP 7-673-2-251).
اللغةen
الناشرInstitute of Electrical and Electronics Engineers Inc.
الموضوعcharacterization
experimental conditions
grain size
irradiation
mSILAR
Photo sensor
العنوانEffect of synthesis conditions on ZnO thin film photosensitivity via mSILAR technique
النوعConference Paper
الصفحات391-396
dc.accessType Abstract Only


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