Effect of synthesis conditions on ZnO thin film photosensitivity via mSILAR technique
| المؤلف | Thomas, Deepu |
| المؤلف | Augustine, Simon |
| المؤلف | Sadasivuni, Kishor Kumar |
| المؤلف | Cabibihan, John John |
| تاريخ الإتاحة | 2020-09-10T10:45:18Z |
| تاريخ النشر | 2017 |
| اسم المنشور | 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017 |
| المصدر | Scopus |
| الملخص | Zinc oxide (ZnO) nano-polycrystalline thin film has been synthesized by microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The prepared samples were annealed in air and an inert atmosphere. X-ray diffraction (XRD) studies confirm the presence of hexagonal wurtzite ZnO structure in both synthesized films. The field emission scanning electron microscope (FESEM) revealed the flowered nature of ZnO films. The semiconductor characteristic of the samples was analyzed by using current-voltage (I-V) curves. The electrical resistance and photoconductivity studies of the samples were investigated with and without electron beam irradiation. We provide evidence for the photosensitivity enhancement for the sample prepared in the inert condition by irradiation. We demonstrate the electrical, temperature sensing, and photo conducting properties can be varied to a required level by electron beam irradiation. 1 2017 IEEE. |
| راعي المشروع | This publication was made possible by the support of an NPRP grant from the Qatar National Research Fund (NPRP 7-673-2-251). |
| اللغة | en |
| الناشر | Institute of Electrical and Electronics Engineers Inc. |
| الموضوع | characterization experimental conditions grain size irradiation mSILAR Photo sensor |
| النوع | Conference Paper |
| الصفحات | 391-396 |
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