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Investigations of He <sup>+</sup> implantation and subsequent annealing effects in InP
(
Elsevier
, 2006 , Article)
The influence of 70 keV He + ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion ...