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Effect of the length of silicon nano-dot/wire on band gap
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Institute of Electrical and Electronics Engineers Inc. (IEEE)
, 2014 , Conference Paper)
We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ...
Oxygen passivation as effective technique for tailoring the nature of band gap of silicon nanowires
(
Institute of Electrical and Electronics Engineers Inc. (IEEE)
, 2015 , Conference Paper)
Silicon nanowires have been subjected to several experiential and theoretical studies, including chemical tuning with different substituents aiming to tailor the band gap as well as increasing optical absorption efficiency ...
Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
(
Institute of Physics Publishing
, 2015 , Article)
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, clear evidence of the zero-biased ...
Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells
(
Elsevier B.V.
, 2014 , Article)
We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions of the metals, and minority carrier lifetimes ...
Photoresponse of silicon with asymmetric area contacts
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Institute of Physics Publishing
, 2016 , Article)
We report on high performance metal-semiconductor-metal (MSM) photosensors based on asymmetric metal pad areas. The reported devices require a single-step metal deposition, and exhibit large photo response even under ...
Tailoring optical absorption in silicon nanostructures from UV to visible light: A TDDFT study
(
Elsevier Ltd
, 2016 , Article)
The utilization of silicon nanostructures, from quantum dots to nanowires, for photovoltaic applications depends on understanding the effect of their physical structure on their optical absorption properties. In this work, ...
TDDFT Studies on sheet size-dependency of optoelectronic properties of 2d silicon
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Institute of Electrical and Electronics Engineers Inc.
, 2019 , Conference Paper)
Silicene, a two-dimensional (2D) silicon nanosheet, has gained immense interest due to potential applications, better compatibility, and expected integration with current silicon (Si) technology. This work explores the ...
Simulation study of Schottky contact based single Si wire solar cell
(
IEEE
, 2014 , Conference Paper)
We model single silicon nanowire (SiNW) solar cells with dissimilar work function metal contacts. Both short circuit current (ISC) and open circuit voltage (VOC) have been investigated. Effects of nanowire dimension, ...
Theoretical investigation of the oxygen bond dissociation energies in graphene oxide
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Institute of Electrical and Electronics Engineers Inc.
, 2016 , Conference Paper)
The theoretical vibrational spectrum, oxygen bond dissociation energies (BDE), atomic charges and hydrogen bonding has been investigated using wB97XD/6-31g(d) method of calculation. The order of BDE for C-O comes in the ...
Photoconductive response of strained silicon nanowires: A Monte Carlo study
(
AIP Publishing LLC.
, 2014 , Article)
Using Ensemble Monte Carlo simulations, the photocurrent in a 500 nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have ...