• Photoresponse of silicon with asymmetric area contacts 

      Rabbani, M. Golam; Sundararajan, Jency P.; Verma, Amit; Nekovei, Reza; Khader, Mahmoud M.; ... more authors ( Institute of Physics Publishing , 2016 , Article)
      We report on high performance metal-semiconductor-metal (MSM) photosensors based on asymmetric metal pad areas. The reported devices require a single-step metal deposition, and exhibit large photo response even under ...
    • Simulation study of Schottky contact based single Si wire solar cell 

      Rabbani, M. Golam; Verma, Amit; Nekovei, Reza; Khader, Mahmoud M; Anantram, M.P. ( IEEE , 2014 , Conference Paper)
      We model single silicon nanowire (SiNW) solar cells with dissimilar work function metal contacts. Both short circuit current (ISC) and open circuit voltage (VOC) have been investigated. Effects of nanowire dimension, ...
    • Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires 

      Rabbani, M. Golam; Patil, Sunil R.; Verma, Amit; Villarreal, Julian E.; Korgel, Brian A.; ... more authors ( Institute of Physics Publishing , 2015 , Article)
      Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, clear evidence of the zero-biased ...