Ordered Mesoporous Tin Oxide Semiconductors with Large Pores and Crystallized Walls for High-Performance Gas Sensing

Abstract

Owing to their distinct chemical and physical properties, mesoporous metal oxide semiconductors have shown great application potential in catalysis, electrochemistry, energy conversion, and energy storage. In this study, mesoporous crystalline SnO2 materials have been synthesized through an evaporation-induced co-assembly (EICA) method using poly(ethylene oxide)-b-polystyrene diblock copolymers as the template, tin chlorides as the tin sources, and tetrahydrofuran as the solvent. By controlling conditions of the co-assembly process and employing a carbon-supported thermal treatment strategy, highly ordered mesoporous SnO2 materials with a hexagonal mesostructure (space group P63/mmc) and crystalline pore walls can be obtained. The mesoporous SnO2 is employed for fabricating gas sensor nanodevices which exhibit an excellent sensing performance toward H2S with high sensitivity (170, 50 ppm) and superior stability, owing to its high surface area (98 m2/g), well-connected mesopores of ca. 18.0 nm, and high density of active sites in the crystalline pore walls. The chemical mechanism study reveals that both SO2 and SnS2 are generated during the gas sensing process on the SnO2-based sensors.