Investigation of optical and electrical properties of Cobalt-doped Ge-Sb-S thin film
Author | Musa I. |
Author | Qamhieh Z. |
Author | Mahmoud S. |
Author | El-Shaer M. |
Author | Ayesh A. |
Author | Qamhieh N. |
Available date | 2020-03-18T10:47:15Z |
Publication Date | 2019 |
Publication Name | Results in Physics |
Resource | Scopus |
ISSN | 22113797 |
Abstract | Amorphous Germanium Antimony Sulphide (Ge-Sb-S) doped with Cobalt (Co) have been deposited on glass substrates by thermal evaporation technique on a glass substrate. The films deposited onto glass substrates are characterized by Energy Dispersive X-ray Fluorescence Spectrometer, UV–VIS spectrophotometer, Raman spectroscopy, and Capacitance-Voltage Keithley meter. The optical band gap was calculated from the UV–Visible spectrum and found to be 2.05 eV. Raman spectroscopy measurements reveal that a wide band spectrum from 300 to 410 cm−1 centered at 355 cm−1. The Raman shift peaks at 325 cm−1 and 350 cm−1 are as-signed to the bond stretching mode Sb-S and Ge-S, respectively. In addition, from the obtained Raman spectra it is concluded that the presence of Co doped with Ge-Sb-S. The capacitance and conductance versus voltage measurements were performed at different temperatures. The results show a slight increase in the capacitance with temperature and it reaches a maximum value around 150 °C, and eventually it becomes negative. This behavior is interpreted in terms of the nucleation growth process and the thermally activated conduction process with measured activation energy of 0.79 eV. |
Sponsor | This work is funded by the University Program for Advanced Research - United Arab Emirates University , (project no. 31S313 ). |
Language | en |
Publisher | Elsevier B.V. |
Subject | Amorphous chalcogenides Capacitance measurements Cobalt doping Optical band gap Raman spectroscopy |
Type | Article |
Volume Number | 13 |
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