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المؤلفOzden, Burcu
المؤلفKhanal, Min P
المؤلفMirkhani, Vahid
المؤلفYapabandara, Kosala
المؤلفYang, Chungman
المؤلفKo, Sangjong
المؤلفYoun, Suhyeon
المؤلفHamilton, Michael C
المؤلفSk, Mobbassar Hassan
المؤلفAhyi, Ayayi Claude
المؤلفPark, Minseo
تاريخ الإتاحة2021-09-01T10:02:47Z
تاريخ النشر2016
اسم المنشورJournal of Nanoscience and Nanotechnology
المصدرScopus
معرّف المصادر الموحدhttp://dx.doi.org/10.1166/jnn.2016.12590
معرّف المصادر الموحدhttp://hdl.handle.net/10576/22408
الملخصTime-resolved photocurrent (TRPC) spectroscopy with a variable-wavelength sub-bandgap light excitation was used to study the dynamics of the decaying photocurrent generated in the heterostructures of the AlGaN/GaN high electron mobility transistors (HEMTs) layers. In AlGaN/GaN HEMTs, reliability of the device is degraded due to the prevalence of current collapse. It is recognized that electrically active deep level defects at the surface/interfaces and the bulk in the HEMTs layers can contribute to the unwanted current collapse effect. Therefore, it is of great importance to analyze the deep level defects if the reliability of the HEMTs device is to be improved. In this research, TRPC spectroscopy was used to elucidate the origin and nature of the deep level defects by analyzing the time evolution of the photocurrent decay excited at different wavelengths of light. The two devices that show similar characteristics for wavelength-dependency on photocurrent generation were chosen, and TRPC spectroscopy was conducted on these devices. Although the two samples show similar characteristics for the wavelength-dependency on photocurrent generation, they exhibited dissimilar time-dependent photocurrent decay dynamics. This implies that TRPC spectroscopy can be used to distinguish the traps which have different origins but have the same de-trapping energy.
اللغةen
الناشرAmerican Scientific Publishers
الموضوعDefects
Electric current measurement
Electron mobility
Field effect transistors
Gallium nitride
Photocurrents
Semiconducting aluminum compounds
Silicon wafers
Spectroscopy
Surface defects
AlGaN/gaN
AlGaN/GaN high electron mobility transistors
Electrically active defects
Persistent Photoconductivity
Photocurrent generations
Spectroscopic diagnostics
Time-resolved
Wavelength dependency
High electron mobility transistors
العنوانTime-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers
النوعArticle
الصفحات7630-7634
رقم العدد7
رقم المجلد16
dc.accessType Abstract Only


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