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AuthorOzden, Burcu
AuthorKhanal, Min P
AuthorMirkhani, Vahid
AuthorYapabandara, Kosala
AuthorYang, Chungman
AuthorKo, Sangjong
AuthorYoun, Suhyeon
AuthorHamilton, Michael C
AuthorSk, Mobbassar Hassan
AuthorAhyi, Ayayi Claude
AuthorPark, Minseo
Available date2021-09-01T10:02:47Z
Publication Date2016
Publication NameJournal of Nanoscience and Nanotechnology
ResourceScopus
URIhttp://dx.doi.org/10.1166/jnn.2016.12590
URIhttp://hdl.handle.net/10576/22408
AbstractTime-resolved photocurrent (TRPC) spectroscopy with a variable-wavelength sub-bandgap light excitation was used to study the dynamics of the decaying photocurrent generated in the heterostructures of the AlGaN/GaN high electron mobility transistors (HEMTs) layers. In AlGaN/GaN HEMTs, reliability of the device is degraded due to the prevalence of current collapse. It is recognized that electrically active deep level defects at the surface/interfaces and the bulk in the HEMTs layers can contribute to the unwanted current collapse effect. Therefore, it is of great importance to analyze the deep level defects if the reliability of the HEMTs device is to be improved. In this research, TRPC spectroscopy was used to elucidate the origin and nature of the deep level defects by analyzing the time evolution of the photocurrent decay excited at different wavelengths of light. The two devices that show similar characteristics for wavelength-dependency on photocurrent generation were chosen, and TRPC spectroscopy was conducted on these devices. Although the two samples show similar characteristics for the wavelength-dependency on photocurrent generation, they exhibited dissimilar time-dependent photocurrent decay dynamics. This implies that TRPC spectroscopy can be used to distinguish the traps which have different origins but have the same de-trapping energy.
Languageen
PublisherAmerican Scientific Publishers
SubjectDefects
Electric current measurement
Electron mobility
Field effect transistors
Gallium nitride
Photocurrents
Semiconducting aluminum compounds
Silicon wafers
Spectroscopy
Surface defects
AlGaN/gaN
AlGaN/GaN high electron mobility transistors
Electrically active defects
Persistent Photoconductivity
Photocurrent generations
Spectroscopic diagnostics
Time-resolved
Wavelength dependency
High electron mobility transistors
TitleTime-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers
TypeArticle
Pagination7630-7634
Issue Number7
Volume Number16
dc.accessType Abstract Only


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