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AuthorShiri, Daryoush
AuthorVerma, Amit
AuthorKhader, Mahmoud M.
Available date2016-03-09T14:00:55Z
Publication Date2014-04
Publication NameJournal of Applied Physics
ResourceScopus
CitationShiri, D., Verma, A., Khader, M.M. "Photoconductive response of strained silicon nanowires: A Monte Carlo study" (2014) Journal of Applied Physics, 115 (13), art. no. 133708, .
ISSN0021-8979
URIhttp://dx.doi.org/10.1063/1.4870466
URIhttp://hdl.handle.net/10576/4232
AbstractUsing Ensemble Monte Carlo simulations, the photocurrent in a 500 nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the order of 21.3 mA/W for an input light wavelength of 532 nm and intensity of 0.25-2.5 kW/cm2. The super-unity slope of 1.2 in photo conductance versus input light intensity suggests that the nanowire has a photoconductive gain and highlights its advantage over germanium nanowires with sub-unity slope (0.77). The generated photocurrents are in the 0.1 nA-1 nA range. Density Functional Theory and Tight Binding methods were used for strain application and band structure calculation, respectively. Both longitudinal acoustic and optical phonons were included in the calculation of the carrier-phonon scattering events, which showed a two-order of magnitude stronger role for longitudinal optical phonons.
SponsorNPRP Grant No. 5-968-2-403 from the Qatar National Research Fund (a member of Qatar Foundation).
Languageen
PublisherAIP Publishing LLC.
SubjectMonte Carlo methods
Phonons
Photoconductivity
Band structure calculation
Carrier-phonon scattering
Longitudinal acoustic
Longitudinal optical phonons
Photoconductive gains
Photoconductive response
Strained silicon nanowires
Tight binding methods
TitlePhotoconductive response of strained silicon nanowires: A Monte Carlo study
TypeArticle
Issue Number13
Volume Number115
dc.accessType Abstract Only


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