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AuthorFakher, Sundes
AuthorNejm, Razan
AuthorAyesh, Ahmad
AuthorAl-Ghaferi, Amal
AuthorZeze, Dagou
AuthorMabrook, Mohammed
Available date2016-10-16T10:00:25Z
Publication Date2016-09-02
Publication NameMolecules
Identifierhttp://dx.doi.org/10.3390/molecules21091166
CitationFakher, S.; Nejm, R.; Ayesh, A.; AL-Ghaferi, A.; Zeze, D.; Mabrook, M. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures. Molecules 2016, 21, 1166.
URIhttp://hdl.handle.net/10576/4889
AbstractThe electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.
SponsorBritish Council for their financial support (grant RC GS 249)
Languageen
PublisherMDPI AG
Subjectorganic memory devices
single-walled carbon-nanotubes
pentacene
charge transfer
TitleSingle-Walled Carbon-Nanotubes-Based Organic Memory Structures
TypeArticle
Issue Number9
Volume Number21
ESSN1420-3049
dc.accessType Open Access


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