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AuthorRabbani, M. Golam
AuthorPatil, Sunil R.
AuthorVerma, Amit
AuthorVillarreal, Julian E.
AuthorKorgel, Brian A.
AuthorNekovei, Reza
AuthorKhader, Mahmoud M.
AuthorDarling, R. B.
AuthorAnantram, M. P.
Available date2024-06-05T06:36:31Z
Publication Date2015-12-11
Publication NameNanotechnology
Identifierhttp://dx.doi.org/10.1088/0957-4484/27/4/045201
CitationRabbani, M. G., Patil, S. R., Verma, A., Villarreal, J. E., Korgel, B. A., Nekovei, R., ... & Anantram, M. P. (2015). Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires. Nanotechnology, 27(4), 045201.
ISSN0957-4484
URIhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84950157940&origin=inward
URIhttp://hdl.handle.net/10576/55830
AbstractSemiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated using a standard CMOS fabrication process, and utilized metal contacts with dissimilar work functions - Al and Ni. The randomly dispersed NWs respond to light by exhibiting substantial photocurrents and, most remarkably, demonstrate zero-bias photo-switching. The magnitude of the photocurrent is dependent on the NW material, as well as the channel length. The photocurrent in randomly dispersed GeNWs was found to be higher by orders of magnitude compared to SiNWs. In both of these material systems, when the length of the NWs was comparable to the channel length, the currents in sparse NW networks were found to be higher than those in dense NW networks, which can be explained by considering various possible arrangements of NWs in these devices.
SponsorThis work was supported by: - National Science Foundation - [grant No. 1308813]. - Directorate for Engineering - [grant No. 1001174].
Languageen
PublisherInstitute of Physics Publishing
Subjectasymmetric work function
nanowire
random networks
zero-bias response
TitleZero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
TypeArticle
Issue Number4
Volume Number27
ESSN1361-6528
dc.accessType Abstract Only


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