Effect of the length of silicon nano-dot/wire on band gap
| Author | Hassan, Walid M.I. |
| Author | Verma, Amit |
| Author | Nekovei, Reza |
| Author | Khader, Mahmoud M. |
| Author | Anantram, M. P. |
| Available date | 2024-06-05T09:08:18Z |
| Publication Date | 2014-08 |
| Publication Name | Proceedings of the IEEE Conference on Nanotechnology |
| Identifier | http://dx.doi.org/10.1109/NANO.2014.6968131 |
| Citation | Hassan, W. M., Verma, A., Nekovei, R., Khader, M. M., & Anantram, M. P. (2014, August). Effect of the length of silicon nanodot/wire on band gap. In 14th IEEE International Conference on Nanotechnology (pp. 373-376). IEEE. |
| ISSN | 1944-9399 |
| Abstract | We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ideal infinitely long SNW. The H/T atomic ratio can be used to express the S/V ratio, which is approximately linearly related to band gap value. |
| Language | en |
| Publisher | Institute of Electrical and Electronics Engineers Inc. (IEEE) |
| Subject | Bandgap Length Silicon nanowire Theoretical |
| Type | Conference Paper |
| Pagination | 373-376 |
| EISBN | 978-1-4799-5622-7 |
Files in this item
This item appears in the following Collection(s)
-
GPC Research [488 items ]