The effect of doping crystals of tgs with some di- and trivalent ions on its: (i) dielectric constant and a.c. Conductivity

Abstract

The problem of the existence of a new ferroelectric phase transition at low temperatures in TGS crystals is discussed. The influence of some inorganic divalent and trivalent ions presented in the lattice of TGS on dielectric and a.c. conduction is examined. The internal biasing field caused by the existence of dopants in TGS crystals is found to have an effect similar to the effect of an external biasing field working on the crystal. A small thermal hysteresis in the dielectric behaviour is detected at the transition temperature. Both a.c. conductivity and activation energy change as a result of the existence of the distorted lattice caused by the dopants. The consistency between the results of the dielectric constant and the a.c. conductivity is quite noticeable