Browsing by Subject "Gallium arsenide"
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Activation and stabilization of gallium arsenide anode in an aqueous photoelectrochemical cell
( Elsevier , 2003 , Article)The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogenerated currents significantly. This layer was formed as a result of an anodic polarization of illuminated n-GaAs in acidified ... -
Activation and stabilization of gallium arsenide anode in an aqueous photoelectrochemical cell
( Elsevier B.V. , 2003 , Article)The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogenerated currents significantly. This layer was formed as a result of an anodic polarization of illuminated n-GaAs in acidified ... -
Inhibiting corrosion of n-GaAs by cetylpyridinium chloride for stabilised photoelectochemical cell
( Maney Publishing , 2010 , Article)The cationic surfactant cetylpyridinium chloride (CPC) provides photocorrosion inhibition to the GaAs surface when CPC is chemisorbed on the GaAs surface from aqueous acidic electrolytes at concentrations of CPC lower than ... -
Prevention of gallium arsenide photocorrosion by an epoxy adhesion layer
( Elsevier Ltd , 2004 , Article)Coating of gallium arsenide with an adhesion layer of commercial epoxy prevented its photocorrosion. A two-component room temperature curing adhesive paste (Araldite 2014) has been selected. When GaAs/Araldite was employed ...