Optical Matching For Microwave Active Devices

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contributor.author Hindy, Moataza A. en_US
date.accessioned 2009-11-25T13:03:24Z en_US
date.available 2009-11-25T13:03:24Z en_US
date.issued 1997 en_US
identifier.citation Engineering Journal of Qatar University, 1997, Vol. 10, Pages 109-121. en_US
identifier.uri http://hdl.handle.net/10576/7833 en_US
description.abstract This paper describes a microstrip optically controlled matching technique between microwave active devices with low impedance (less than 10 ohms) and a conventional 50 or 70 ohm communication system in the upper microwave and mm-wave frequencies. The bandwidth is 20 GHz. the maximum insertion loss is less than 1.5 dB and the reflection coefficient is less than-7 dB. The laser controlled terminal impedance's can be changed and adjusted by choosing the carriers lifetime of the semiconductor substrate and by changing the power and wavelength of the optical source. en_US
language.iso en en_US
publisher Qatar University en_US
subject Engineering: Research & Technology en_US
title Optical Matching For Microwave Active Devices en_US
type Article en_US
identifier.pagination 109-121 en_US
identifier.volume 10 en_US


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