Study The Effect of Classical And Rapid Thermal Annealing on The Electrical Characteristics of P-Ge/P-si Heterojunction
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This paper describes the effect of classical thermal (CTA) and rapid thermal annealing (RTA) on the electrical characteristics (I-V, C-V) of isotype Ge/Si heterojunction. The I-V characteristics were improved after annealing and they follow double-Schottky model, the optimum value of ideality factor was 1.2 for heterojunctions annealed by CTA (600 C/20 min), and was 1.3 for samples undergo to RTA (500 C/25 S). The C-V results suggest that the junctions are abrupt type. The effect of annealing type and annealing conditions on the built-in-voltage (Vbi) was investivated.