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AuthorThomas, Deepu
AuthorVijayalakshmi, K. A.
AuthorSadasivuni, Kishor Kumar
AuthorThomas, Ajith
AuthorPonnamma, Deepalekshmi
AuthorCabibihan, John-John
Available date2020-09-24T08:11:57Z
Publication Date2017
Publication NameJournal of Electronic Materials
ResourceScopus
ISSN3615235
URIhttp://dx.doi.org/10.1007/s11664-017-5680-9
URIhttp://hdl.handle.net/10576/16286
AbstractMicrowave-assisted successive ionic layer adsorption and reaction was employed to synthesize Sn-ZnO (tin-doped zinc oxide), and its sensitivity to ultraviolet radiation is compared with zinc oxide (ZnO). The sensing films were made by the dip-coated method on an indium titanium oxide glass substrate, and the sensing performance was monitored using the 300-700 nm wavelength of UV-Vis light. Excellent sensitivity and recovery were observed for the Sn-doped ZnO sensor device, especially at 380 nm wavelength of ultraviolet (UV) light (response and recovery time 2.26 s and 8.63 s, respectively, at 5 V bias voltage). The variation in photocurrent with respect to dark and light illumination atmosphere was well illustrated based on the Schottky and inter-particle network effects. Doping of Sn on ZnO nanoparticles varied the surface roughness and crystallite size as observed from scanning electron microscopic and x-ray diffraction studies. Here, we demonstrate a simple and economical fabrication technique for designing a high-performance UV light sensor. The developed device works at room temperature with high durability and stability. 1 2017, The Minerals, Metals & Materials Society.
Languageen
PublisherSpringer New York LLC
Subjectdoping
Electronics
metal nanoparticles
mSILAR
optical sensor
TitleA Fast Responsive Ultraviolet Sensor from mSILAR-Processed Sn-ZnO
TypeArticle
Pagination6480-6487
Issue Number11
Volume Number46
dc.accessType Abstract Only


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