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Self-implantation of Cz-Si: Clustering and annealing of defects
(
Elsevier
, 2006 , Article)
Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 × 10 15 ions/cm 2 and after annealing between ...
Corrosion properties of duplex treated Ti-6Al-4V alloy in chloride media using electrochemical and positron annihilation spectroscopy techniques
(
Elsevier B.V.
, 2006 , Article)
The corrosion properties of duplex-treated and nitrided Ti-6Al-4V have been investigated in 0.025, 0.25 and 2.5 M NaCl using electrochemical techniques, Positron Annihilation Spectroscopy (PAS), X-ray diffraction (XRD), ...
Investigations of He <sup>+</sup> implantation and subsequent annealing effects in InP
(
Elsevier
, 2006 , Article)
The influence of 70 keV He + ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion ...
Positron annihilation and ion beam analysis of ion-bombardment-induced hydrogen release and oxidation of ultra high molecular weight polyethylene
(
Elsevier
, 2007 , Article)
Ultra high molecular weight polyethylene was bombarded with He+ and Ar+ ions to fluences ranging from 1013 to 2×1016 ions/cm2. Rutherford backscattering and nuclear reaction analysis were applied to study mechanism of ...
The effect of gamma irradiation and shelf aging in air on the oxidation of ultra-high molecular weight polyethylene
(
Elsevier
, 2006 , Article)
This study has investigated the effect of shelf aging, for up to one year in air, on the properties of gamma-irradiated ultra-high molecular weight polyethylene (UHMWPE). A variety of techniques were used to characterize ...