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المؤلفJérôme, Folla Kamdem
المؤلفEvariste, Wembe Tafo
المؤلفBernard, Essimbi Zobo
المؤلفCrespo, Maria Liz
المؤلفCicuttin,
المؤلفres
المؤلفReaz, Mamun Bin Ibne
المؤلفBhuiyan, Mohammad Arif Sobhan
المؤلفChowdhury, Muhammad Enamul Hoque
تاريخ الإتاحة2023-04-17T06:57:48Z
تاريخ النشر2020
اسم المنشورInformacije MIDEM
المصدرScopus
معرّف المصادر الموحدhttp://dx.doi.org/10.33180/InfMIDEM2020.101
معرّف المصادر الموحدhttp://hdl.handle.net/10576/42006
الملخصThe Charge Sensitive Amplifier (CSA) is the key module of the front-end electronics of various types of Silicon detectors and most radiation detection systems. High gain, stability, and low input noise are the major concerns of a typical CSA circuit in order to achieve amplified susceptible input charge (current) for further processing. To design such a low-noise, stable, and low power dissipation solution, a CSA is required to be realized in a complementary metal-oxide-semiconductor (CMOS) technology with a compact design. This research reports a low-noise highly stabile CSA design for Silicon detectors applications, which has been designed and validated in TSMC 0.35 um CMOS process. In a typical CSA design, the detector capacitance and the input transistor's width are the dominant parameters for achieving low noise performance. Therefore, the Equivalent Noise Charge (ENC) with respect to those parameters has been optimized, for a range of detector capacitance from 0.2 pF - 2 pF. However, the parallel noise of the feedback was removed by adopting a voltage-controlled NMOS resistor, which in turn helped to achieve high stability of the circuit. The simulation results provided a baseline gain of 9.92 mV/fC and show that ENC was found to be 42.5 e-with 3.72 e-/pF noise slope. The Corner frequency exhibited by the CSA is 1.023 GHz and the output magnitude was controlled at -56.8 dB; it dissipates 0.23 mW with a single voltage supply of 3.3 V with an active die area of 0.0049 mm2 Copyright 2020 by the Authors.
راعي المشروعThe support from the ICTP/IAEA Sandwich Training Educational Programme for this research is gratefully acknowledged. Besides, this research was partially funded by the UKM research university grant DIP-2018-017 and by the Qatar National Research Foundation (QNRF) grant UREP 23-027-2-012.
اللغةen
الناشرSociety for Microelectronics, Electric Components and Materials
الموضوعCMOS
CSA
Front-End
Low- noise
Silicon detector
العنوانA 0.35µm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications
العنوان البديلNizkošumen stabilen ojačevalnik za silicijeve detektorje
النوعArticle
الصفحات3-13
رقم العدد1
رقم المجلد50
dc.accessType Open Access


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