Variation Of The Electrical Properties Of Manganese Thin Films With Deposition Conditions

Abstract

The behaviour of the electrical properties of manganese thin films of different thickness (240 - 1500 A) evaporated under different deposition conditions was studied. The effect of the rate of evaporation (1-7 A/s), the residual gas pressure (10'5 - 10'*' Torr) and the type of residual gas (being air or pure argon) was investigated. Low deposition rates and/or high residual gas pressure resulted in higher resistance values. Using argon instead of air as residual gas enhanced the electrical conductivity.