Browsing Gas Processing Center by Author "Verma, Amit"

Now showing items 1-4 of 4

    • Effect of the length of silicon nano-dot/wire on band gap 

      Hassan, Walid M.I.; Verma, Amit; Nekovei, Reza; Khader, Mahmoud M.; Anantram, M. P. ( Institute of Electrical and Electronics Engineers Inc. (IEEE) , 2014 , Conference Paper)
      We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ...

    • Oxygen passivation as effective technique for tailoring the nature of band gap of silicon nanowires 

      Hassan, Walid M.I.; Khader, Mahmoud M.; Verma, Amit; Nekovei, Reza; Anantram, M. P. ( Institute of Electrical and Electronics Engineers Inc. (IEEE) , 2015 , Conference Paper)
      Silicon nanowires have been subjected to several experiential and theoretical studies, including chemical tuning with different substituents aiming to tailor the band gap as well as increasing optical absorption efficiency ...

    • Photoresponse of silicon with asymmetric area contacts 

      Rabbani, M. Golam; Sundararajan, Jency P.; Verma, Amit; Nekovei, Reza; Khader, Mahmoud M.; ... more authors ( Institute of Physics Publishing , 2016 , Article)
      We report on high performance metal-semiconductor-metal (MSM) photosensors based on asymmetric metal pad areas. The reported devices require a single-step metal deposition, and exhibit large photo response even under ...

    • Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires 

      Rabbani, M. Golam; Patil, Sunil R.; Verma, Amit; Villarreal, Julian E.; Korgel, Brian A.; ... more authors ( Institute of Physics Publishing , 2015 , Article)
      Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, clear evidence of the zero-biased ...