Wang S.; Mirkhani V.; Yapabandara K.; Cheng R.; Hernandez G.; Khanal M.P.; Sultan M.S.; Uprety S.; Shen L.; Zou S.; Xu P.; Ellis C.D.; Sellers J.A.; Hamilton M.C.; Niu G.; Sk M.H.; Park M.... more authors ... less authors (
American Institute of Physics Inc.
, 2018 , Article)
We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical ...