Experimental Investigation of the N-Pbs/P-Si Heterojunction Band Lineup with I-V and C-V Measurements
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In this paper we present experimental investigation of band lineup of near ideal PbS/Si heterojunction diode using I-V and C-V measurements. The C-V measurements show that the fabricated diodes were abrupt type, and the built-in potential Vui wds determined from C-2-V plot. The band offsets of A,Ec: 0.15 eV and A,Ev:0.55 eV were calculated at 300 K for conduction and valence bands, respectively. The energy band diagram of n-PbS/p-Si heterojunction was constructed. I-V measurements of different temperatures near 300K were employed to frnd the potential barrier to electron transport process across the junction.